ABSTRACTS

по разделам конференции:
Optical properties of nitrides
Electrical properties
Substrates for epitxial growth of nitrides. Рост объемных кристаллов
Технология нитридов: Молекулярно-пучковая эпитаксия. Лазерная абляция.
Технология нитридов: Газотранспортная эпитаксия.
Технология электронных и оптоэлектронных приборов на основе нитридов
Параметры электронных и оптоэлектронных приборов на основе нитридов
Электронные и оптоэлектронные устройства на основе нитридов
 
MOCVD GROWTH of III-N STRUCTURES in IOFFE
A.S. Usikov, W.V. Lundin, A.V. Sakharov, N.M. Shmidt
Optical properties of nitrides
TRANSVERSE OPTICALLY PUMPED LASERS BASED ON GaN EPITAXIAL LAYERS
E.V. Lutsenko, G.P. Yablonskii, V.N. Pavlovskii, V.Z. Zubialevich, I.P. Marko, M. Heuken, B. Schineller and K. Heime
FAR FIELD EMISSION SPECTROSCOPY OF OPTICALLY PUMPED LASERS BASED ON InGaN/GaN/Al2O3 HETEROSTRUCTURES
E. V. Lutsenko, G. P. Yablonskii, V. N. Pavlovskii, V. Z. Zubialevich, I. P. Marko, M. Heuken, B. Schineller and K. Heime
RAMAN SPECTROSCOPY OF SOLID SOLUTIONS AlxGa1-x
V.Yu. Davydov, A.A. Klochikhin, I.N. Goncharuk, A.N. Smirnov, A.E. Nikolaev, A.S. Usikov, W.V. Lundin, M.V. Baidakova, J. Aderhold, J. Stemmer, O. Semchinova
INVESTIGATION OF MULTILAYERED STRUCTURES GaN/AlxGa1-xN BY RAMAN-SPECTROSCOPY
V.Yu. Davydov, A.A. Klochikhin, I.N. Goncharuk, A.N. Smirnov, A.S. Usikov, W.V. Lundin, E.E. Zavarin, A.V. Sakharov, M.V. Baidakova, J. Stemmer, H. Klausing, D. Mistele
IMPACT IONIZATION OF EXCITONIC STATES IN GaN AND GaN/AlGaN QUANTUM WELLS
D.K. Nelson, M.A. Jacobson, V.D. Kagan, N. Schmidt, B. Gil, N. Grandjean and J. Massies
TIME-RESOLVED PHOTOLUMINESCENCE OF STRUCTURES WITH QUANTUM WELLS ON THE BASIS OF InGaN/GaN MATERIAL SYSTEM
A.V. Andrianov, V.Yu. Nekrasov, N.M. Schmidt, and N.N. Zinov'ev
OPTICAL CONTACTLESS TECHNIQUE FOR Al1-xGa1-xN STRUCTURE SCREENING
A.L. Filatov
OPTICAL SPECTRA AND ELECTRONIC STRUCTURE OF NITRIDE GROUP OF A3B5
M.A. Zlobina, V.V. Sobolev
Структурные и электрические свойства нитридов
MULTIFRACTAL PARAMETERIZATION METHOD OF SURFACE STRUSTURE OF GaN EPITAXIAL LAYERS
N.M. Shmidt, A.G. Kolmakov, A.N. Titkov, A.D. Kryzhanovskii, V.V. Ratnikov, V.V. Emtsev, D.S. Poloskin, E.E. Zavarin
TRANSFORMATION OF ELECTRON TRAPS INDUCED BY γ-IRRADIATION IN GaN EPITAXIAL LAYERS DURING ANNEALING
N.M. Shmidt, D.V. Davydov, V.V. Emtsev, E.E. Zavarin, A.A. Lebedev, W.V. Lundin, D.S. Poloskin, A.S. Usikov
CATHODOLUMINESCENCE SPECTRA OF InGaN/AlGaN/GaN HETEROSTRUCTURES
A.N.Turkin, M.V.Chukichev
CHEMICAL TREATMENT OF GaN(0001) SURFACE BY SULFIDE SOLUTIONS
V.N. Bessolov, Yu.V. Zhilyaev, E.E. Zavarin, M.E. Kompan, E.V. Konenkova, A.S. Usikov, V.A. Fedirko
THE PROPERTIES OF CRYSTALS GaN, PREPARED BY VARIOUS TECHNIQUES
Yu.V. Zhilyaev, М.Е. Коmpan, М.М. Мezdrogina, Т.А. Оrlova, S.D. Raevsky, Sh.A. Yusupova
Подложки для эпитаксиального роста нитридов. Рост объемных кристаллов
GaN EPITAXIAL LAYERS ON SELF-FACETED SHAPED α-Al2O3:Ti+3 RIBBONS GROWN BY STEPANOV'S TECHNIQUE
V.I. Nikolaev, A.E. Nikolaev, S.I. Bakholdin, V.A. Ivantsov, V.M. Krymov
X-RAY DIFFRACTION AND PHOTOLUMINESCENCE STUDY OF LARGE DIAMETER GaN CRYSTALS GROWN FROM THE MELT AT REDUCED PRESSURE
V.A. Ivantsov, V.A. Sukhoveyev, V.A. Dmitriev, A. Davydov, J.A. Freitas, Jr.
Технология нитридов: Молекулярно-пучковая эпитаксия. Лазерная абляция.
STM STUDY OF ATOMIC STRUCTURES ON A GaN(0001) SURFACE GROWN BY MOLECULAR-BEAM EPITAXY (invited)
R.Z. Bakhtizin, Q.-K. Xue, Q.-Z. Xue, Y. Hasegawa, T. Sakurai
HIGH QUALITY GaN FILM GROWTH ON SiC SURFACE
R.Z. Bakhtizin, Q.-K. Xue, Q.-Z. Xue, Y. Hasegawa, T. Sakurai, I.T.C. Tsong
GAS SOURCE MOLECULAR BEAM EPITAXY OF GaN P-N JUNCTIONS ON SI(111) AND SAPPHIRE(0001)
S. Nikishin, G. Kipshidze1, V. Kuryatkov, A. Zubrilov, C. Jin, K. Choi, Iu. Gherasoiu, L. Grave de Peralta, T. Prokofyeva, M. Holtz, and H. Temkin
SELF-ORGANIZED GaN NANOSTRUCTURES GROWN BY RF MBE
V.V. Mamutin, V.A. Vekshin, , N.A. Cherkashin, V.V. Ratnikov, V.Yu. Davydov, S.V. Ivanov
DEPOSITION OF C-BN FILMS BY LASER ABLATION
M.B. Guseva, V.G. Babaev, V.S. Guden, V.V. Khvostov, E.N. Shouleshov
Технология нитридов: Газотранспортная эпитаксия.
HVPE GROWTH AND CHARACTERISATION OF GaN FILMS ON SAPPHIRE WITH DIFFERENT BUFFERS (invited)
T. Paskova and B. Monemar
ISLOCATION STRUCTURE OF THICK HVPE GaN LAYERS ACCORDING TO X-RAY MEASUREMENTS OF MICRODISTORSION TENZOR
V.V. Ratnikov, R.N. Kyutt, T.V. Shubina, T. Paskova, E. Valcheva, B. Moonemar
GROWTH OF Si-DOPED GaN LAYERS ON SiC BY HVPE
A.V. Fomin, A.E. Cherenkov, A.I. Pechnikov, D.V. Tsvetkov, A.E. Nikolaev, I.P. Nikitina, A.S. Zubrilov, N.I. Kuznetcov, V.A. Dmitriev
SURFACE KINETICS IN GROUP-III NITRIDE GROWTH
S.Yu.Karpov, R.A.Talalaev, Yu.N.Makarov
STUDY OF THE III-NITRIDES MOCVD GROWTH PROCESS WITH IN-SITU OPTICAL REFLECTANCE MONITORING
W.V. Lundin, E.E. Zavarin , D.A. Bedarev , A.I. Besulkin, I.L. Krestnikov, A.S. Usikov
INFLUENCE OF GROWTH INTERRUPTIONS AND GAS AMBIENT ON OPTICAL AND STRUCTURAL PROPERTIES OF InGaN/GaN MULTILAYER STRUCTURES
E.E. Zavarin, A.V. Sakharov, W.V. Lundin, D.A. Bedarev, A.F. Tsatsul'nikov, A.S. Usikov, N.N. Ledentsov, Zh.I. Alferov
OBTAINING OF EPITAXIAL STRUCTURES OF GALLIUM NITRIDE
Е.N. Vigdorovich, J.N. Sveshnikov
Технология электронных и оптоэлектронных приборов на основе нитридов
LIGHT-EMITTING DIODES BASED ON InGaN/GaN/AlGaN HETEROSTRUCTURES
A.V. Sakharov, W.V. Lundin, E.E. Zavarin, D.A. Bedarev, A.S. Usikov, N.M. Shmidt, A.F. Tsatsul'nikov, N.N. Ledentsov, Zh.I. Alferov
SOME FEATURES OF PHASE SEPARATION IN InGaN/GaN/AlGaN LIGHT EMITTING DIODES
W.V. Lundin, A.V. Sakharov, A.F. Tsatsul'nikov, E.E. Zavarin, D.A. Bedarev, A.I. Besulkin, N.N. Ledentsov, and A.S. Usikov
POST-GROWTH TECHNOLOGY OF LIGHT-EMITTING AND PHOTODETECTING III-N BASED STRUCTURES
N.M. Shmidt, Yu.M. Zadiranov, O.V. Titkova, V.M. Shcheglov
FEATURES OF REACTIVE ION-BEAM ETCHING OF GaN USING O2 + Ar WORKING GAS
A.I. Stognij, S.V. Koriakin, G.P. Yablonskiy, V.N. Pavlovskiy, E.V. Lucenko, M. Heuken, B. Schineller, K. Heime
REACTIVE ION ETCHING OF GAN
E.M. Ramushina, V.I. Skopina, E.M. Tanklevskaya
PROTON IMPLANTATION AS A MEANS TO PRODUCE INSULATING REGIONS IN GaN-BASED DEVICES
A.Y. Polyakov, A.S. Usikov, N.B. Smirnov, A.V. Govorkov, N.M. Shmidt, W.V. Lundin
Параметры электронных и оптоэлектронных приборов на основе нитридов
ANALISYS OF RECOMBINATION MECHANISMS IN HETEROSTRUCTURES InGaN/AlGaN/GaN WITH QUANTUM WELLS
V.E. Kudryashov, A.E. Yunovich
STIMULATED AND COHERENT EMISSION SPECTRA OF GaN-BASED INJECTION LASERS
V.E. Kudryashov, S.S. Mamakin, A.E. Yunovich, S.D. Yakubovich
BAND EDGE LUMINESCENCE IN InGaN MULTIPLE QUANTUM WELL LIGHT EMITTING DIODES WITH QUATERNARY AlInGaN BARRIERS
M. Shatalov, A. Chitnis, V. Adivarahan, A. Lunev, J. Zhang, J.W. Yang, Q. Fareed, G. Simin, A. Zakheim, M. Asif Khan, R. Gaska, M.S. Shur
THE CURRENT MECHANISM IN OHMIC CONTACTS Pd - HIGH DOPED THE CURRENT MECHANISM IN OHMIC CONTACTS p-AlxGa1-xN
T.V. Blank, Yu.A. Goldberg, E.V. Kalinina, O.V. Konstantinov, A.E. Nikolaev, A.V. Fomin, A.E. Cherenkov
LOW FREQUENCY NOISE IN GaN AND GAN-BASED DEVICES
M.E. Levinshtein, S.L. Rumyantsev, M.S. Shur, R. Gaska, A. Khan
FIELD-EFFECT TRANSISTORS BASED ON AlGaN/GaN - HETEROSTRUCTURES (review)
A.N. Kovalev
Электронные и оптоэлектронные устройства на основе нитридов
THE SPECIAL FEATURES OF InGaN QW BLUE AND GREEN LEDs OPERATING AT HIGH FORWARD CURRENT
A.L. Zakgeim, M. Shatalov, G. Simin, M. Asif Khan
PHOTOPHOSPHORS ON THE BASIS OF YAG, DOPED BY Се3+ IN WHITE LEDS
O.M. Merkushev, L.G. Vedernikova
GaN UV-PHOTODETECTORS FOR WATER PURIFIERS
N.M. Shmidt, V.M. Andreev, A.A. Vlasov, E.E. Zavarin, Yu.M. Zadiranov, W.V. Lundin, A.V. Sakharov, O.V. Titkova, A.S. Usikov, V.M. Shcheglov, V.P. Fokanov, A.V. Shallar